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Journal Articles

Depth profiling of oxide-trapped charges in 6H-SiC MOS structures by slant etching method

Saito, Kazunari; Yoshikawa, Masahito; Oshima, Takeshi; Ito, Hisayoshi; Nashiyama, Isamu; Takahashi, Yoshihiro*; Onishi, Kazunori*

JAERI-Conf 97-003, p.243 - 248, 1997/03

no abstracts in English

Journal Articles

Depth profile of trapped charges in oxide layer of 6H-SiC metal-oxide-semiconductor structures

Yoshikawa, Masahito; *; Oshima, Takeshi; Ito, Hisayoshi; Nashiyama, Isamu; Yoshida, Sadafumi*; Okumura, Hajime*; Takahashi, Yoshihiro*; Onishi, Kazunori*

Journal of Applied Physics, 80(1), p.282 - 287, 1996/07

https://doi.org/10.1063/1.362817
 Times Cited Count：22 Percentile：70.69(Physics, Applied)

no abstracts in English

Journal Articles

Depth profile of oxide-trapped charges in 6H-SiC metal-oxide-semiconductor structures irradiated with gamma-rays

Yoshikawa, Masahito; *; Oshima, Takeshi; Ito, Hisayoshi; Nashiyama, Isamu; Okumura, Hajime*; Yoshida, Sadafumi*

14th Symp. on Materials Science and Engineering, Research Center of Ion Beam Technology, Hosei Univ., 0, p.159 - 165, 1996/00

no abstracts in English

Journal Articles

The Change of the charge distribution in the oxide layer of MOS structure with NH$$_{3}$$ annealing due to $$gamma$$-ray irradiation; Gate voltage dependence

Imaki, Shunsaku*; Takahashi, Yoshihiro*; Yoshikawa, Masahito; Onishi, Kazunori*

Heisei-7-Nendo Nihon Daigaku Riko Gakubu Gakujutsu Koenkai Rombunshu, 0, p.151 - 152, 1995/00

no abstracts in English

Journal Articles

Evaluation of distributed charge in the insulators of MNOS structure by slanted etching method

*; *; Takahashi, Yoshihiro*; Yoshikawa, Masahito; Onishi, Kazunori*

Heisei-7-Nendo Nihon Daigaku Riko Gakubu Gakujutsu Koenkai Rombunshu, 0, p.153 - 154, 1995/00

no abstracts in English

Journal Articles

A Slanted etching method to analyze the trapped charge distribution in the insulators of MIS structures

Onishi, Kazunori*; Takahashi, Yoshihiro*; Imaki, Shunsaku*; *; Yoshikawa, Masahito

Proc. of 21st Int. Symp. for Testing and Failure Analysis (ISTFA 95), 0, p.269 - 274, 1995/00

no abstracts in English

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